IS357B

IS357B

OPTOISOLATOR 3.75KV TRANS 4-SOP
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Beskrivelse

Tekniske parametere

 

IS357A

IS357B

IS357C

IS357D

80000

80000

80000

80000

Voltage - Isolation

3750Vrms

3750Vrms

3750Vrms

3750Vrms

80% @ 5mA

130% @ 5mA

200% @ 5mA

300% @ 5mA

160% @ 5mA

260% @ 5mA

400% @ 5mA

600% @ 5mA

-

-

-

-

Voltage - Output (Max)

80V

80V

80V

80V

Current - Output / Channel

50mA

50mA

50mA

50mA

Voltage - Forward (Vf) (Typ)

1.2V

1.2V

1.2V

1.2V

Current - DC Forward (If) (Max)

-

-

-

-

-55-C ~ 110-C

-55-C ~ 110-C

-55-C ~ 110-C

-55-C ~ 110-C

SOP4(4.4x1.27)

SOP4(4.4x1.27)

SOP4(4.4x1.27)

SOP4(4.4x1.27)

 

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The IS357 series consists of an infrared light emitting diode optically coupled to an NPN silicon photo transistor in a space efficient Mini Flat Package.

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